Part Image

STFU13N60M2 - STMicroelectronics

Description: N-channel 600 V, 0.35 Ω typ., 11 A MDmesh™ M2 Power MOSFET in a TO-220FP ultra narrow leads package

Download STFU13N60M2 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
STFU13N60M2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP ultra narrow leads _2022
click to zoom
3D Models
STFU13N60M2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220FP ultra narrow leads _2022
click to zoom

STFU13N60M2 Details

  • Manufacturer Part Number:

    STFU13N60M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • JESD-609 Code:

    e3

  • Terminal Finish:

    Matte Tin (Sn) - annealed

STFU13N60M2 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the STFU13N60M2 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings.
  • To ensure proper cooling, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tjmax). Use a heat sink or thermal interface material to reduce the thermal resistance, and ensure good airflow around the device. You can also use thermal simulation tools to estimate the device's temperature under different operating conditions.
  • The recommended gate drive voltage for the STFU13N60M2 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and oscillations.
  • Yes, the STFU13N60M2 can be used in a parallel configuration to increase current handling, but it requires careful consideration of the device's thermal and electrical characteristics. Ensure that the devices are properly matched, and that the gate drive and control circuits are designed to handle the increased current and voltage stresses.
  • To protect the STFU13N60M2 from overvoltage and overcurrent conditions, use a combination of voltage and current sensing circuits, along with protective devices such as TVS diodes and fuses. Implement overvoltage and overcurrent detection circuits to trigger shutdown or fault protection mechanisms in the event of an abnormal condition.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

STFU13N60M2 Overview

Use the download button to access the STFU13N60M2 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like STFU1, or try a keyword search, such as Power Field-Effect Transistors

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

Parts related to STFU13N60M2

Showing 0 results