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STFU15N80K5 - STMicroelectronics

Description: N-channel 800 V, 300 mΩ typ., 14 A MDmesh K5 Power MOSFET in a TO-220FP ultra narrow leads package

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STFU15N80K5 - STMicroelectronics - PCB symbol
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PCB Footprints
STFU15N80K5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP ultra narrow leads _2022
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STFU15N80K5 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-220FP ultra narrow leads _2022
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STFU15N80K5 Details

  • Manufacturer Part Number:

    STFU15N80K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220FP, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.375 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.5 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    56 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STFU15N80K5 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STFU15N80K5 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • The thermal resistance of the STFU15N80K5 can be calculated using the thermal resistance values provided in the datasheet. The junction-to-case thermal resistance (RthJC) is 0.5°C/W, and the case-to-ambient thermal resistance (RthCA) depends on the specific heat sink and cooling system used. You can use the following formula: RthJA = RthJC + RthCA.
  • The recommended gate drive voltage for the STFU15N80K5 is between 10V and 15V. A higher gate drive voltage can reduce the switching losses, but it may also increase the gate oxide stress and reduce the device's reliability.
  • Yes, the STFU15N80K5 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and oscillations.
  • To protect the STFU15N80K5 from overvoltage and overcurrent, you can use a combination of voltage clamping devices, such as TVS diodes, and current sensing resistors. Additionally, you can implement overcurrent protection using a dedicated IC or a microcontroller-based solution.

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STFU15N80K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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