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STFU26N60M2 - STMicroelectronics

Description: N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package

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STFU26N60M2 - STMicroelectronics - PCB symbol
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PCB Footprints
STFU26N60M2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP ultra narrow leads _2022
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3D Models
STFU26N60M2 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-220FP ultra narrow leads _2022
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STFU26N60M2 Details

  • Manufacturer Part Number:

    STFU26N60M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220FP, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    250 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.165 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STFU26N60M2 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STFU26N60M2 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings.
  • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material, such as thermal paste or thermal tape, and ensuring good contact between the device and the heat sink or PCB. Additionally, the PCB design should allow for good airflow and heat dissipation.
  • The recommended gate drive voltage for the STFU26N60M2 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can help to reduce switching losses, but it may also increase the risk of gate oxide breakdown.
  • To protect the STFU26N60M2 from electrostatic discharge (ESD), it's essential to handle the device with care and follow proper ESD handling procedures. This includes using ESD-safe materials, such as ESD-safe workbenches and wrist straps, and avoiding direct contact with the device's pins.
  • The maximum allowed dv/dt for the STFU26N60M2 is not explicitly stated in the datasheet, but it's typically in the range of 1-10 kV/μs. Exceeding this limit can cause the device to malfunction or fail. It's essential to ensure that the device is operated within the recommended dv/dt limits to ensure reliable operation.

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STFU26N60M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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