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STFW45N65M5 - STMicroelectronics

Description: N-channel 650 V, 0.067 Ohm typ., 35 A, MDmesh M5 Power MOSFET in TO-3PF package

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STFW45N65M5 - STMicroelectronics - PCB symbol
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PCB Footprints
STFW45N65M5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3PF_2024-1
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3D Models
STFW45N65M5 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-3PF_2024-1
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STFW45N65M5 Details

  • Manufacturer Part Number:

    STFW45N65M5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, TO-3PF, 3 PIN

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    810 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STFW45N65M5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STFW45N65M5 is not explicitly stated in the datasheet. However, according to STMicroelectronics' application notes, the device can operate safely up to 100 kHz with a maximum drain-source voltage of 450 V and a maximum drain current of 65 A.
  • To ensure proper thermal management, it's essential to follow the recommended thermal design guidelines provided by STMicroelectronics. This includes using a suitable heat sink, applying a thermal interface material (TIM), and ensuring good airflow around the device. The maximum junction temperature (Tj) should not exceed 175°C.
  • The recommended gate drive voltage for the STFW45N65M5 is between 10 V and 15 V. However, the device can tolerate up to 20 V gate-source voltage. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
  • Yes, the STFW45N65M5 can be used in a parallel configuration to increase the overall current handling capability. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current distribution and potential damage to the devices.
  • The typical turn-on time (ton) for the STFW45N65M5 is around 20 ns, and the typical turn-off time (toff) is around 40 ns. These values can vary depending on the specific application and operating conditions.

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STFW45N65M5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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