STGB10H60DF footprint, schematic symbol and 3D model by STMicroelectronics

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STGB10H60DF - STMicroelectronics PCB footprint - Other - Other - STGB10H60DF

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Datasheet Download Datasheet
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Part Number STGB10H60DF
Manufacturer STMicroelectronics
Pin Count 3
Part Category Transistor IGBT
Package Category Other
Footprint Name Other - STGB10H60DF
Released Date Feb 22, 2022
Last Modified Date Jan 8, 2026 2:31 PM UTC
Pinout / Pin List Click Here (Member Only)

STGB10H60DF Details

Manufacturer Part Number:
STGB10H60DF
Brand Name:
STMicroelectronics
Rohs Code:
Yes
Part Life Cycle Code:
Active
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
15 Weeks
Manufacturer:
STMicroelectronics
YTEOL:
9
Additional Feature:
BULK: 1000
Case Connection:
COLLECTOR
Collector Current-Max (IC):
20 A
Collector-Emitter Voltage-Max:
600 V
Configuration:
SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max:
7 V
Gate-Emitter Voltage-Max:
20 V
JEDEC-95 Code:
TO-263AB
JESD-30 Code:
R-PSSO-G2
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
2
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
245
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
115 W
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn) - annealed
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
214 ns
Turn-on Time-Nom (ton):
26.8 ns
VCEsat-Max:
1.95 V

STGB10H60DF Frequently Asked Questions (FAQs)

The maximum junction temperature that the STGB10H60DF can withstand is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the device to dissipate heat efficiently.
The recommended gate resistor value for the STGB10H60DF is between 10 ohms and 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI), but may increase switching losses.
Yes, the STGB10H60DF is suitable for high-reliability applications. It's manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
To protect the STGB10H60DF from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuitry. Ensure the device is operated within its specified voltage and current ratings, and consider adding protective components such as varistors or transient voltage suppressors to absorb voltage spikes.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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