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STGB10NB37LZT4 - STMicroelectronics

Description: STGB10NB37LZT4, IGBT Transistor N-channel, 20 A 375 V, 3-Pin D2PAK

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STGB10NB37LZT4 Details

  • Manufacturer Part Number:

    STGB10NB37LZT4

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    D2PAK

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    1

  • Additional Feature:

    VOLTAGE CLAMPING

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    20 A

  • Collector-Emitter Voltage-Max:

    375 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • Gate-Emitter Thr Voltage-Max:

    2.4 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AUTOMOTIVE IGNITION

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    17800 ns

  • Turn-on Time-Nom (ton):

    860 ns

STGB10NB37LZT4 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGB10NB37LZT4 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet. Typically, this includes a Vcc of 12V, a Vgs of 0V to 10V, and a Vds of 0V to 10V. Additionally, ensure the device is properly heatsinked to prevent thermal runaway.
  • For optimal thermal performance, it's recommended to use a multi-layer PCB with a thermal via under the device to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the PCB should be designed to minimize thermal resistance.
  • To protect the device from ESD, follow proper handling and storage procedures. Use an ESD wrist strap or mat, and ensure the device is stored in an anti-static bag or container. During PCB assembly, use ESD-safe tools and equipment.
  • The recommended gate drive circuit for the STGB10NB37LZT4 typically includes a gate driver IC, such as the STMicroelectronics L638xE, which provides a high-current, low-impedance drive signal to the gate. The gate driver should be capable of delivering a peak current of at least 1A.

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STGB10NB37LZT4 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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Part Image STGB10NB37LZ STMicroelectronics

Insulated Gate Bipolar Transistor, 20A I(C), 375V V(BR)CES, N-Channel, TO-263AB