STGB7H60DF footprint, schematic symbol and 3D model by STMicroelectronics

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STGB7H60DF - STMicroelectronics PCB footprint - Other - Other - D²PAK_2022-20

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Datasheet Download Datasheet
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Part Number STGB7H60DF
Manufacturer STMicroelectronics
Pin Count 3
Part Category Transistor IGBT
Package Category Other
Footprint Name Other - D²PAK_2022-20
Released Date Oct 4, 2022
Last Modified Date Jan 8, 2026 2:31 PM UTC
Pinout / Pin List Click Here (Member Only)

STGB7H60DF Details

Manufacturer Part Number:
STGB7H60DF
Brand Name:
STMicroelectronics
Rohs Code:
Yes
Part Life Cycle Code:
Obsolete
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
15 Weeks
Manufacturer:
STMicroelectronics
YTEOL:
0
Case Connection:
COLLECTOR
Collector Current-Max (IC):
14 A
Collector-Emitter Voltage-Max:
600 V
Configuration:
SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max:
6.9 V
Gate-Emitter Voltage-Max:
20 V
JEDEC-95 Code:
TO-263AB
JESD-30 Code:
R-PSSO-G2
Number of Elements:
1
Number of Terminals:
2
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
88 W
Surface Mount:
YES
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
263 ns
Turn-on Time-Nom (ton):
42.8 ns
VCEsat-Max:
1.95 V

STGB7H60DF Frequently Asked Questions (FAQs)

The maximum junction temperature (Tj) of the STGB7H60DF is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a metal plate. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK, and ensure the heat sink is designed for the maximum power dissipation of the device.
The recommended gate drive voltage for the STGB7H60DF is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but it may also increase the risk of gate oxide breakdown. Always check the datasheet for the recommended gate drive voltage range.
Yes, the STGB7H60DF can be used in a parallel configuration to increase the current handling capability. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and oscillations.
To protect the STGB7H60DF from overvoltage and overcurrent, use a suitable voltage clamp or a transient voltage suppressor (TVS) diode. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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