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STGD19N40LZ - STMicroelectronics

Description: STMicroelectronics STGD19N40LZ, IGBT Transistor, 25 A 425 V, 1MHz, 3-Pin DPAK

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STGD19N40LZ - STMicroelectronics PCB footprint - Other - Other - STGD19N40LZ-1
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STGD19N40LZ Details

  • Manufacturer Part Number:

    STGD19N40LZ

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    10

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    25 A

  • Collector-Emitter Voltage-Max:

    425 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • Gate-Emitter Thr Voltage-Max:

    2.6 V

  • Gate-Emitter Voltage-Max:

    16 V

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    22200 ns

  • Turn-on Time-Nom (ton):

    4450 ns

  • VCEsat-Max:

    1.85 V

STGD19N40LZ Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the STGD19N40LZ can withstand is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate resistor value for the STGD19N40LZ is between 10Ω and 100Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI).
  • Yes, the STGD19N40LZ is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.
  • To protect the STGD19N40LZ from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) diode to limit the voltage across the device. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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STGD19N40LZ Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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