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STGFW20V60DF - STMicroelectronics

Description: STMicroelectronics STGFW20V60DF, IGBT Transistor, 40 A 600 V, 1MHz, 3-Pin TO-3P

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STGFW20V60DF - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3PF-ren1
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STGFW20V60DF - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-3PF-ren1
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STGFW20V60DF Details

  • Manufacturer Part Number:

    STGFW20V60DF

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-3PF, 3 PIN

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    86.7 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    173 ns

  • Turn-on Time-Nom (ton):

    49 ns

  • VCEsat-Max:

    2.2 V

STGFW20V60DF Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGFW20V60DF is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for optimal performance and reliability.
  • To calculate the power dissipation of the STGFW20V60DF, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) from junction to ambient (Rth(j-a)). The power dissipation (Pd) can be calculated using the formula: Pd = (Vds * Ids) + (Rth(j-a) * (Tj - Ta)), where Vds is the voltage drop, Ids is the current, Rth(j-a) is the thermal resistance, Tj is the junction temperature, and Ta is the ambient temperature.
  • The recommended gate resistor value for the STGFW20V60DF depends on the specific application and the required switching frequency. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms. However, it's recommended to consult the application note AN5042 from STMicroelectronics for more detailed guidance on gate resistor selection.
  • Yes, the STGFW20V60DF is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate charge, to ensure optimal performance and minimize losses.
  • To ensure the reliability of the STGFW20V60DF in a high-temperature environment, it's essential to follow proper thermal management practices, such as using a heat sink, ensuring good airflow, and keeping the junction temperature below 150°C. Additionally, it's recommended to follow the recommended operating conditions and derating guidelines specified in the datasheet.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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