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STGFW40H65FB - STMicroelectronics

Description: IGBT Transistors Trench gate field-stop 650 V, 40 A high speed HB series IGBT

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STGFW40H65FB - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3PF (H=5.7mm)
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STGFW40H65FB - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-3PF (H=5.7mm)
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STGFW40H65FB Details

  • Manufacturer Part Number:

    STGFW40H65FB

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    62.5 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    202 ns

  • Turn-on Time-Nom (ton):

    52 ns

  • VCEsat-Max:

    2 V

STGFW40H65FB Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGFW40H65FB is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To calculate the power dissipation of the STGFW40H65FB, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) of the package. The formula is: Pd = (Vds * Ids) + (Vgs * Igs) + (Rth * (Tj - Ta)), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, Igs is the gate-source current, Rth is the thermal resistance, Tj is the junction temperature, and Ta is the ambient temperature.
  • The recommended gate drive voltage for the STGFW40H65FB is between 10V and 15V, with a maximum gate-source voltage of 20V. A higher gate drive voltage can improve switching performance, but it also increases the risk of gate oxide breakdown.
  • Yes, the STGFW40H65FB can be used in a half-bridge configuration, but it's essential to ensure that the device is properly driven and that the gate-source voltage is within the recommended range. Additionally, you should consider the dead-time and overlap time to prevent shoot-through currents and ensure reliable operation.
  • To protect the STGFW40H65FB from overvoltage and overcurrent, you can use a combination of voltage regulators, overvoltage protection (OVP) circuits, and current sense resistors. Additionally, consider implementing overcurrent protection (OCP) and short-circuit protection (SCP) mechanisms to prevent damage to the device.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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