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STGH30H65DFB-2AG - STMicroelectronics

Description: Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H²PAK-2 package

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STGH30H65DFB-2AG Details

  • Manufacturer Part Number:

    STGH30H65DFB-2AG

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    8

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    16 ns

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, 13 INCH

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    260 W

  • Reference Standard:

    AEC-Q101

  • Rise Time-Max (tr):

    20 ns

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    186 ns

  • Turn-on Time-Nom (ton):

    44 ns

  • VCEsat-Max:

    2 V

STGH30H65DFB-2AG Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGH30H65DFB-2AG is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper driving and control of the STGH30H65DFB-2AG, it's essential to use a suitable gate driver IC, such as the STMicroelectronics STGAP2SiCS or similar, and follow the recommended gate driving circuitry and layout guidelines.
  • For optimal performance and thermal management, it's recommended to follow the PCB layout guidelines provided in the datasheet and application notes. This includes using a thermal pad, thermal vias, and a heat sink with a thermal interface material (TIM) to dissipate heat efficiently.
  • Yes, the STGH30H65DFB-2AG can be used in a parallel configuration to increase current handling. However, it's crucial to ensure that the devices are properly matched, and the gate driving and control circuits are designed to accommodate the parallel configuration.
  • The recommended snubber circuits and components for the STGH30H65DFB-2AG can be found in the datasheet and application notes. Typically, a resistor-capacitor (RC) snubber circuit is used to reduce voltage overshoot and ringing during switching.

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STGH30H65DFB-2AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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