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STGP15M65DF2 - STMicroelectronics

Description: Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220 package

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STGP15M65DF2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220_1-1
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STGP15M65DF2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220_1-1
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STGP15M65DF2 Details

  • Manufacturer Part Number:

    STGP15M65DF2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    30 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    136 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    265 ns

  • Turn-on Time-Nom (ton):

    34 ns

  • VCEsat-Max:

    2 V

STGP15M65DF2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGP15M65DF2 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To calculate the power dissipation of the STGP15M65DF2, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) from junction to ambient (Rth(j-a)). The formula is: Pd = (Vds * Ids) + (Rth(j-a) * Tj). Refer to the datasheet for the specific values.
  • The recommended gate resistor value for the STGP15M65DF2 depends on the specific application and the desired switching frequency. A general guideline is to use a gate resistor between 10 Ω to 100 Ω. However, it's recommended to consult the datasheet and application notes for more specific guidance.
  • Yes, the STGP15M65DF2 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the application's requirements are within the device's specifications.
  • To protect the STGP15M65DF2 from overvoltage and overcurrent, you can use a combination of voltage regulators, current limiters, and protection diodes. Additionally, ensure that the device is operated within its specified voltage and current ratings, and consider using a thermal protection circuit to prevent overheating.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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