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STGP20H65DFB2 - STMicroelectronics

Description: Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO‑220 package

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STGP20H65DFB2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - --0TO-220_(Height=4.6mm)
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STGP20H65DFB2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - --0TO-220_(Height=4.6mm)
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STGP20H65DFB2 Details

  • Manufacturer Part Number:

    STGP20H65DFB2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2020-05-07

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    147 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    178 ns

  • Turn-on Time-Nom (ton):

    26 ns

  • VCEsat-Max:

    2.1 V

STGP20H65DFB2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGP20H65DFB2 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To calculate the power dissipation of the STGP20H65DFB2, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (RthJA). The formula is: Pd = (Vds * Ids) + (Vgs * Igs) + (RthJA * Tj). Refer to the datasheet for the specific values.
  • The recommended gate resistor value for the STGP20H65DFB2 depends on the specific application and switching frequency. A general guideline is to use a gate resistor between 10 Ω to 100 Ω. However, it's recommended to consult the application note or a dedicated gate driver IC datasheet for more specific guidance.
  • Yes, the STGP20H65DFB2 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate driver and layout are optimized for high-frequency operation.
  • To protect the STGP20H65DFB2 from overvoltage and overcurrent, you can use a combination of voltage regulators, TVS diodes, and current sense resistors. Additionally, consider implementing overvoltage and overcurrent protection circuits, such as a crowbar circuit or a foldback current limiter.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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