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STGP20V60F - STMicroelectronics

Description: STMicroelectronics STGP20V60F, IGBT Transistor, 40 A 600 V, 1MHz, 3-Pin TO-220

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STGP20V60F - STMicroelectronics - PCB symbol
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PCB Footprints
STGP20V60F - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - ---0TO-220_(Height=4.6mm)
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STGP20V60F - STMicroelectronics - 3D model - Transistor Outline, Vertical - ---0TO-220_(Height=4.6mm)
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STGP20V60F Details

  • Manufacturer Part Number:

    STGP20V60F

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    20 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    167 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    173 ns

  • Turn-on Time-Nom (ton):

    49 ns

  • VCEsat-Max:

    2.2 V

STGP20V60F Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the STGP20V60F is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To calculate the power dissipation of the STGP20V60F, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) from junction to ambient (Rth(j-a)). The power dissipation (Pd) can be calculated using the formula: Pd = (Vds * Ids) + (Rth(j-a) * Tj), where Vds is the drain-source voltage, Ids is the drain-source current, and Tj is the junction temperature.
  • The recommended gate drive voltage for the STGP20V60F is between 10V and 15V, with a maximum gate-source voltage (Vgs) of ±20V. A higher gate drive voltage can improve switching performance, but it also increases the risk of gate oxide damage.
  • Yes, the STGP20V60F is suitable for high-frequency switching applications up to 100 kHz. However, you need to consider the device's switching losses, gate charge, and thermal performance when designing your application. It's recommended to use a suitable gate driver and to optimize the PCB layout to minimize parasitic inductances and capacitances.
  • To protect the STGP20V60F from overvoltage and overcurrent, you can use a combination of voltage regulators, overvoltage protection (OVP) circuits, and current sense resistors. Additionally, you can implement overcurrent protection (OCP) and short-circuit protection (SCP) using external components or ICs. It's also recommended to use a suitable heatsink and thermal interface material to prevent thermal runaway.

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STGP20V60F Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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