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STGP40V60F - STMicroelectronics

Description: STMICROELECTRONICS - STGP40V60F - IGBT Single Transistor, 80 A, 1.8 V, 283 W, 600 V, TO-220AB, 3 Pins

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PCB Footprints
STGP40V60F - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 (dual gauge) _2020
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3D Models
STGP40V60F - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220 (dual gauge) _2020
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STGP40V60F Details

  • Manufacturer Part Number:

    STGP40V60F

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    283 W

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    241 ns

  • Turn-on Time-Nom (ton):

    73 ns

  • VCEsat-Max:

    2.3 V

STGP40V60F Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the STGP40V60F is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be assumed to be around 20-30A for 10ms pulses, but this should be verified through simulation and testing.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. The heat sink should be attached to the device using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink and avoid blocking airflow with nearby components.
  • The recommended gate drive voltage for the STGP40V60F is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but may also increase the risk of gate oxide breakdown. A lower gate drive voltage can reduce the risk of gate oxide breakdown, but may increase switching losses.
  • To protect the STGP40V60F from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a comparator to detect overcurrent conditions and shut down the device if necessary.
  • The recommended PCB layout for the STGP40V60F involves keeping the power loops as small as possible, using a solid ground plane, and minimizing the distance between the device and the decoupling capacitors. Additionally, use a Kelvin connection for the gate drive to reduce noise and ensure a low-impedance path for the gate current.

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STGP40V60F Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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