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STGW15M120DF3 - STMicroelectronics

Description: Trench gate field-stop 1200 V, 15 A low-loss M series IGBT in a TO-247 and TO-247 long leads packages

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PCB Footprints
STGW15M120DF3 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - T O-247
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3D Models
STGW15M120DF3 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - T O-247
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STGW15M120DF3 Details

  • Manufacturer Part Number:

    STGW15M120DF3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    30 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    259 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    406 ns

  • Turn-on Time-Nom (ton):

    39 ns

  • VCEsat-Max:

    2.3 V

STGW15M120DF3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the STGW15M120DF3 is 150°C. However, it's recommended to operate the device at a temperature below 125°C for reliable operation and to ensure a long lifespan.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's exposed pad, and use a heat sink with a thermal resistance of less than 1°C/W. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the STGW15M120DF3 is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
  • To protect the STGW15M120DF3 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse to detect and respond to overcurrent conditions. Implementing a protection circuit with a fast response time can help prevent damage to the device.
  • To ensure optimal performance and minimize electromagnetic interference (EMI), it's recommended to follow a good PCB layout practice. Keep the power traces short and wide, use a solid ground plane, and place decoupling capacitors close to the device. Avoid running sensitive signal traces near the power traces, and use a shielded cable for the gate drive signal.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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