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STGW19NC60HD - STMicroelectronics

Description: 19 A, 600 V, very fast IGBT with ultra-fast diode

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PCB Footprints
STGW19NC60HD - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - T O-247
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STGW19NC60HD - STMicroelectronics  - 3D model - Transistor Outline, Vertical - T O-247
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STGW19NC60HD Details

  • Manufacturer Part Number:

    STGW19NC60HD

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247AC

  • Package Description:

    TO-247, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.25

  • Collector Current-Max (IC):

    42 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5.75 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    140 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    272 ns

  • Turn-on Time-Nom (ton):

    32 ns

STGW19NC60HD Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the STGW19NC60HD can withstand is 175°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow. Additionally, consider derating the device's power handling capabilities at high temperatures.
  • The recommended gate resistor value for the STGW19NC60HD is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) but may increase switching losses.
  • Yes, you can use multiple STGW19NC60HD devices in parallel to increase current handling. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential oscillations.
  • To protect the STGW19NC60HD from overvoltage and overcurrent conditions, consider using a combination of voltage clamping devices (e.g., TVS diodes) and current sensing circuits. Additionally, implement overcurrent protection mechanisms, such as current limiting or foldback, to prevent damage to the device.

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STGW19NC60HD Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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Part Image STGW19NC60H STMicroelectronics

Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-247