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STGW20IH125DF - STMicroelectronics

Description: 1250 V, 20 A IH series trench gate field-stop IGBT

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STGW20IH125DF - STMicroelectronics - PCB symbol
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PCB Footprints
STGW20IH125DF - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO 247
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3D Models
STGW20IH125DF - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO 247
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STGW20IH125DF Details

  • Manufacturer Part Number:

    STGW20IH125DF

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.62

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    1250 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    285 ns

STGW20IH125DF Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGW20IH125DF is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To calculate the power dissipation of the STGW20IH125DF, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) from junction to ambient (Rth(j-a)). The formula is: Pd = (Vds * Ids) + (Rth(j-a) * Tj). Refer to the datasheet for the specific values.
  • The recommended gate resistor value for the STGW20IH125DF depends on the specific application and switching frequency. A general guideline is to use a gate resistor between 10 Ω to 100 Ω. However, it's recommended to consult the application note or a dedicated gate driver IC datasheet for more specific guidance.
  • Yes, the STGW20IH125DF is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, thermal management, and layout design to ensure reliable operation. Consult the datasheet and application notes for more information.
  • To ensure proper cooling of the STGW20IH125DF, consider the following: use a heat sink with a thermal interface material, ensure good airflow, and optimize the PCB layout to minimize thermal resistance. Consult the datasheet and thermal management application notes for more guidance.

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STGW20IH125DF Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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