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STGW20V60F - STMicroelectronics

Description: STMicroelectronics STGW20V60F, IGBT Transistor, 20 A 600 V, 1MHz, 3-Pin TO-247

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STGW20V60F - STMicroelectronics - PCB symbol
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STGW20V60F - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - STGW20V60F
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STGW20V60F - STMicroelectronics - 3D model - Transistor Outline, Vertical - STGW20V60F
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STGW20V60F Details

  • Manufacturer Part Number:

    STGW20V60F

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.25

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    173 ns

  • Turn-on Time-Nom (ton):

    49 ns

STGW20V60F Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the STGW20V60F can withstand is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to ensure a long lifespan.
  • To calculate the power dissipation of the STGW20V60F, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance from junction to ambient (RthJA). The power dissipation can be calculated using the formula: Pd = (Vds * Ids) + (Vgs * Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
  • The recommended gate drive voltage for the STGW20V60F is between 10V and 15V. However, the gate drive voltage should be adjusted based on the specific application requirements and the desired switching performance.
  • Yes, the STGW20V60F is suitable for high-frequency switching applications up to 100 kHz. However, the device's performance and reliability may degrade at higher frequencies due to increased switching losses and thermal stress. It's essential to carefully evaluate the device's performance and thermal management in high-frequency applications.
  • To ensure the reliability and longevity of the STGW20V60F, it's essential to follow proper design and layout guidelines, such as minimizing thermal resistance, using a suitable heat sink, and ensuring adequate cooling. Additionally, the device should be operated within its recommended specifications, and overvoltage, overcurrent, and overtemperature protection should be implemented to prevent damage.

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STGW20V60F Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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