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STGW25H120F2 - STMicroelectronics

Description: Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

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STGW25H120F2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247_2022
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STGW25H120F2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-247_2022
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STGW25H120F2 Details

  • Manufacturer Part Number:

    STGW25H120F2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    339 ns

  • Turn-on Time-Nom (ton):

    41 ns

STGW25H120F2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the STGW25H120F2 is 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow. Additionally, consider derating the device's power handling capabilities at high temperatures.
  • The recommended gate resistor value for the STGW25H120F2 is typically in the range of 10 Ω to 22 Ω, depending on the specific application and switching frequency. However, it's essential to consult the datasheet and application notes for more detailed guidance.
  • Yes, the STGW25H120F2 can be used in a half-bridge configuration. However, it's crucial to ensure proper dead-time management and synchronization between the high-side and low-side switches to prevent shoot-through currents.
  • To protect the STGW25H120F2 from overvoltage and overcurrent conditions, consider implementing overvoltage protection (OVP) and overcurrent protection (OCP) circuits. These can include voltage supervisors, current sense resistors, and fault detection circuits.

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STGW25H120F2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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