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STGW28IH125DF - STMicroelectronics

Description: IGBT Transistors 1250V 25A trench gate field-stop IGBT

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PCB Footprints
STGW28IH125DF - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO247
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STGW28IH125DF - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO247
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STGW28IH125DF Details

  • Manufacturer Part Number:

    STGW28IH125DF

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.62

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    1250 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    322 ns

  • VCEsat-Max:

    2.5 V

STGW28IH125DF Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGW28IH125DF is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.
  • To calculate the power dissipation of the STGW28IH125DF, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) from junction to ambient (Rth(j-a)). The power dissipation (Pd) can be calculated using the formula: Pd = (Vd x Id) + (Tj - Ta) / Rth(j-a), where Vd is the voltage drop, Id is the current, Tj is the junction temperature, and Ta is the ambient temperature.
  • For good thermal performance, it's recommended to use a PCB layout that provides a large copper area for heat dissipation. The copper area should be connected to a solid ground plane, and the device should be placed near a heat sink or a metal plate. Additionally, ensure that the PCB layout minimizes thermal resistance by using wide traces and avoiding thermal vias.
  • The STGW28IH125DF is designed for high-frequency applications up to 1 MHz. However, it's essential to consider the device's parasitic capacitance, inductance, and resistance when designing the circuit. You may need to add external components, such as snubbers or filters, to ensure stable operation and minimize electromagnetic interference (EMI).
  • To protect the STGW28IH125DF from overvoltage and overcurrent, you can use external components such as voltage regulators, current limiters, and fuses. Additionally, consider implementing overvoltage protection (OVP) and overcurrent protection (OCP) circuits in your design. It's also essential to follow the recommended operating conditions and guidelines provided in the datasheet.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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