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STGW60H65DFB-4 - STMicroelectronics

Description: Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

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STGW60H65DFB-4 - STMicroelectronics PCB footprint - Other - Other - STGW60H65DFB-4-2
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STGW60H65DFB-4 - STMicroelectronics - 3D model - Other - STGW60H65DFB-4-2
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STGW60H65DFB-4 Details

  • Manufacturer Part Number:

    STGW60H65DFB-4

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    329 ns

  • Turn-on Time-Nom (ton):

    91 ns

  • VCEsat-Max:

    2 V

STGW60H65DFB-4 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGW60H65DFB-4 is 150°C, but it's recommended to keep it below 125°C for reliable operation.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. Additionally, applying a thermal interface material (TIM) between the device and heat sink can improve heat transfer.
  • The recommended gate drive voltage for the STGW60H65DFB-4 is between 10V and 15V, with a maximum of 20V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the STGW60H65DFB-4 can be used in a parallel configuration, but it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential damage.
  • The minimum input pulse width required for the STGW60H65DFB-4 is typically around 100ns, but it's recommended to consult the datasheet and application notes for specific guidance on pulse width and frequency requirements.

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STGW60H65DFB-4 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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