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STGW60V60F - STMicroelectronics

Description: Trench gate field-stop, 600 V, 60 A, very high speed, V series IGBT in a TO-247 package

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STGW60V60F - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247[H=5.15mm]
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3D Models
STGW60V60F - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-247[H=5.15mm]
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STGW60V60F Details

  • Manufacturer Part Number:

    STGW60V60F

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.25

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    243 ns

  • Turn-on Time-Nom (ton):

    80 ns

  • VCEsat-Max:

    2.3 V

STGW60V60F Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the STGW60V60F is 175°C. It's essential to ensure that the device operates within this temperature range to prevent damage or malfunction.
  • To calculate the power dissipation of the STGW60V60F, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance. The formula is: Pd = (Vds * Ids) + (Vgs * Igs), where Pd is the power dissipation, Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
  • The recommended gate drive voltage for the STGW60V60F is between 10V and 15V. This ensures proper switching and minimizes the risk of damage or malfunction.
  • Yes, the STGW60V60F is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the application's requirements are within the device's capabilities.
  • To protect the STGW60V60F from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. Additionally, ensure that the device is operated within its recommended operating conditions and that the PCB design is optimized for thermal dissipation.

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STGW60V60F Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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