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STGW75H65DFB2-4 - STMicroelectronics

Description: Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 package

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STGW75H65DFB2-4 Details

  • Manufacturer Part Number:

    STGW75H65DFB2-4

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2020-08-04

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    115 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    357 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    231 ns

  • Turn-on Time-Nom (ton):

    42 ns

  • VCEsat-Max:

    2 V

STGW75H65DFB2-4 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGW75H65DFB2-4 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper thermal management is crucial for the STGW75H65DFB2-4. Ensure good heat dissipation by using a suitable heat sink, applying thermal interface material (TIM), and maintaining a low thermal resistance between the device and the heat sink. Also, consider the maximum power dissipation and thermal impedance of the device.
  • The recommended gate resistor value for the STGW75H65DFB2-4 depends on the specific application and switching frequency. A typical value is between 10 Ω to 100 Ω. However, it's essential to consult the datasheet and application notes for more detailed guidance on gate resistor selection.
  • Yes, the STGW75H65DFB2-4 can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched and synchronized to avoid uneven current sharing and potential oscillations. Consult the datasheet and application notes for more information on parallel operation.
  • The maximum allowable voltage transient for the STGW75H65DFB2-4 is specified in the datasheet as ±10% of the maximum rated voltage. However, it's recommended to limit voltage transients to minimize the risk of device damage or malfunction.

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STGW75H65DFB2-4 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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