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STGW80H65DFB-4 - STMicroelectronics

Description: IGBT Transistors PTD IGBT & IPM Trench gate field-stop 650 V, 80 A high speed HB series IGBT

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STGW80H65DFB-4 - STMicroelectronics PCB footprint - Other - Other - TO247-4
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STGW80H65DFB-4 - STMicroelectronics  - 3D model - Other - TO247-4
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STGW80H65DFB-4 Details

  • Manufacturer Part Number:

    STGW80H65DFB-4

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    120 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    470 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    448 ns

  • Turn-on Time-Nom (ton):

    104 ns

  • VCEsat-Max:

    2 V

STGW80H65DFB-4 Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in their application note AN5046, which includes guidelines for thermal management and PCB design.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal management guidelines, including proper heat sink design, thermal interface material selection, and airflow management.
  • Monitor the device's junction temperature, voltage, and current to detect potential faults and ensure reliability. Implement over-temperature, over-voltage, and over-current protection mechanisms to prevent damage.
  • Optimize the gate driver design by selecting a suitable gate driver IC, ensuring proper impedance matching, and using a low-inductance layout to minimize switching losses and electromagnetic interference (EMI).
  • Handle the device with care to prevent electrostatic discharge (ESD) damage. Use an anti-static wrist strap, mat, or workstation, and ensure the workspace is ESD-protected.

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STGW80H65DFB-4 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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