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STGWA15S120DF3 - STMicroelectronics

Description: STMicroelectronics STGWA15S120DF3, IGBT Transistor, 30 A 1200 V, 3-Pin TO-247

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STGWA15S120DF3 - STMicroelectronics - PCB symbol
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PCB Footprints
STGWA15S120DF3 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long lead
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STGWA15S120DF3 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 long lead
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STGWA15S120DF3 Details

  • Manufacturer Part Number:

    STGWA15S120DF3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    30 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    259 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    584 ns

  • Turn-on Time-Nom (ton):

    31.2 ns

  • VCEsat-Max:

    2.05 V

STGWA15S120DF3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGWA15S120DF3 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • The thermal resistance (Rth) for the STGWA15S120DF3 can be calculated using the formula: Rth = (Tj - Tc) / Pd, where Tj is the junction temperature, Tc is the case temperature, and Pd is the power dissipation. The datasheet provides the thermal resistance values for different packages and mounting conditions.
  • The recommended gate resistor value for the STGWA15S120DF3 depends on the specific application and switching frequency. A general guideline is to use a gate resistor between 10 Ω to 100 Ω to ensure proper switching and minimize oscillations. However, it's recommended to consult the application note or a qualified engineer for a more accurate calculation.
  • Yes, the STGWA15S120DF3 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive and control circuits are designed to handle the parallel configuration. Consult the application note or a qualified engineer for more information.
  • The recommended dead-time for the STGWA15S120DF3 depends on the specific application and switching frequency. A general guideline is to use a dead-time of 1-2 μs to ensure proper switching and minimize shoot-through currents. However, it's recommended to consult the application note or a qualified engineer for a more accurate calculation.

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STGWA15S120DF3 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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