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STGWA30H65DFB2 - STMicroelectronics

Description: Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package

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STGWA30H65DFB2 - STMicroelectronics - PCB symbol
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STGWA30H65DFB2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long lead
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STGWA30H65DFB2 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 long lead
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STGWA30H65DFB2 Details

  • Manufacturer Part Number:

    STGWA30H65DFB2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2020-04-07

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    167 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    184 ns

  • Turn-on Time-Nom (ton):

    27.5 ns

  • VCEsat-Max:

    2.1 V

STGWA30H65DFB2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGWA30H65DFB2 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • The thermal resistance (Rth) for the STGWA30H65DFB2 can be calculated using the formula: Rth = (Tj - Ta) / Pd, where Tj is the junction temperature, Ta is the ambient temperature, and Pd is the power dissipation. The datasheet provides the thermal resistance values for different packages and mounting conditions.
  • The recommended gate drive voltage for the STGWA30H65DFB2 is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but it may also increase power losses and EMI.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a cooling system. Use a thermal interface material (TIM) with a low thermal resistance, and ensure the heat sink is properly mounted and secured. The datasheet provides guidelines for thermal design and layout.
  • The STGWA30H65DFB2 is a high-frequency device, and it's essential to consider EMI and RFI in the design. Use proper PCB layout techniques, such as grounding, shielding, and decoupling, to minimize electromagnetic interference. Additionally, ensure that the device is properly filtered and snubbed to reduce electromagnetic radiation.

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STGWA30H65DFB2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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