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STGWA30HP65FB2 - STMicroelectronics

Description: Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package

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STGWA30HP65FB2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247_Thickness=5.1
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STGWA30HP65FB2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-247_Thickness=5.1
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STGWA30HP65FB2 Details

  • Manufacturer Part Number:

    STGWA30HP65FB2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2019-11-25

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    167 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    184 ns

  • Turn-on Time-Nom (ton):

    112 ns

  • VCEsat-Max:

    2.1 V

STGWA30HP65FB2 Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in the application note AN5046, which includes guidelines for thermal pad connection, copper pouring, and via placement to ensure optimal thermal performance.
  • The STGWA30HP65FB2 requires a gate driver with a minimum output current of 2A and a voltage rating of 15V to 20V. STMicroelectronics recommends using their L638x or L639x gate driver families, which are specifically designed for IGBTs.
  • Although not explicitly stated in the datasheet, STMicroelectronics recommends limiting the overshoot voltage on the Vce pin to 10% of the maximum rated voltage (650V) to prevent damage to the IGBT.
  • To ensure safe operation during short-circuit conditions, it's essential to implement a fast and reliable short-circuit detection mechanism, such as a desaturation detector or a current sense resistor, and to design a robust protection circuit that can quickly turn off the IGBT in case of a fault.
  • For high-power applications, STMicroelectronics recommends using a forced-air cooling system or a liquid cooling system with a heat sink specifically designed for the STGWA30HP65FB2. The heat sink should have a thermal resistance of less than 0.5°C/W to ensure reliable operation.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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