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STGWA40H65DFB - STMicroelectronics

Description: Trench gate field-stop 650 V, 40 A high speed HB series IGBT

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STGWA40H65DFB - STMicroelectronics - PCB symbol
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PCB Footprints
STGWA40H65DFB - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long leads-ren1
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STGWA40H65DFB - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 long leads-ren1
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STGWA40H65DFB Details

  • Manufacturer Part Number:

    STGWA40H65DFB

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2016-06-08

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    283 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    202 ns

  • Turn-on Time-Nom (ton):

    52 ns

  • VCEsat-Max:

    2 V

STGWA40H65DFB Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a large copper area for heat dissipation is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan. Monitor junction temperature (TJ) and adjust the system design accordingly.
  • Monitor the device's junction temperature (TJ), drain-source voltage (VDS), drain current (ID), and gate-source voltage (VGS) to detect potential faults and ensure reliable operation.
  • Use a gate driver with a high current capability (> 1A) and a low output impedance (< 1 ohm). Ensure the driver can provide a fast rise and fall time (< 10 ns) and a high voltage swing (> 10V) to minimize switching losses.
  • Implement ESD protection using TVS diodes or ESD arrays at the input and output pins. Ensure the protection devices are rated for the maximum voltage and current of the application.

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STGWA40H65DFB Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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