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STGWA50H65DFB2 - STMicroelectronics

Description: Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO‑247 long leads package

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STGWA50H65DFB2 - STMicroelectronics - PCB symbol
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STGWA50H65DFB2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long leads-ren1
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STGWA50H65DFB2 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 long leads-ren1
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STGWA50H65DFB2 Details

  • Manufacturer Part Number:

    STGWA50H65DFB2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2020-03-19

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    86 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    272 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    225 ns

  • Turn-on Time-Nom (ton):

    41 ns

  • VCEsat-Max:

    2 V

STGWA50H65DFB2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGWA50H65DFB2 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • The thermal resistance (Rth) for the STGWA50H65DFB2 can be calculated using the formula: Rth = (Tj - Tc) / Pd, where Tj is the junction temperature, Tc is the case temperature, and Pd is the power dissipation. The datasheet provides the thermal resistance values for different packages and mounting conditions.
  • The recommended gate resistance (Rg) for the STGWA50H65DFB2 is typically in the range of 10 ohms to 100 ohms, depending on the application and switching frequency. A higher gate resistance can help reduce electromagnetic interference (EMI) and improve noise immunity.
  • Yes, the STGWA50H65DFB2 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive circuits are designed to handle the increased current and voltage requirements.
  • The minimum switching frequency for the STGWA50H65DFB2 is not explicitly specified in the datasheet. However, it's generally recommended to operate the device at a minimum frequency of 1 kHz to 5 kHz to ensure proper switching and minimize losses.

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STGWA50H65DFB2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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