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STGWA50HP65FB2 - STMicroelectronics

Description: Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in TO-3PF and TO-247 long leads packages

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STGWA50HP65FB2 - STMicroelectronics - PCB symbol
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PCB Footprints
STGWA50HP65FB2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long leads-ren1
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3D Models
STGWA50HP65FB2 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 long leads-ren1
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STGWA50HP65FB2 Details

  • Manufacturer Part Number:

    STGWA50HP65FB2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2020-03-19

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    86 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    272 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    225 ns

  • VCEsat-Max:

    2 V

STGWA50HP65FB2 Frequently Asked Questions (FAQs)

  • STMicroelectronics recommends a 2-layer or 4-layer PCB with a thermal pad connected to a large copper area on the bottom layer to dissipate heat efficiently. A minimum of 1 oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, consider derating the device's power handling capabilities at high temperatures.
  • The maximum allowed voltage on the gate driver input is 20V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • Yes, the STGWA50HP65FB2 can be used in a half-bridge configuration. However, it's essential to ensure that the device is properly biased and that the gate driver is capable of handling the required voltage and current levels.
  • The recommended gate resistance value for optimal switching performance is between 1 ohm and 10 ohms. A lower gate resistance can improve switching speed, but may increase power losses.

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STGWA50HP65FB2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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