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STGWA50M65DF2 - STMicroelectronics

Description: Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads package

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STGWA50M65DF2 - STMicroelectronics - PCB symbol
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PCB Footprints
STGWA50M65DF2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long lead
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3D Models
STGWA50M65DF2 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 long lead
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STGWA50M65DF2 Details

  • Manufacturer Part Number:

    STGWA50M65DF2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Manufacturer Package Code:

    TO-247 long leads

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    315 ns

  • Turn-on Time-Nom (ton):

    66 ns

  • VCEsat-Max:

    2.1 V

STGWA50M65DF2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the STGWA50M65DF2 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate resistor value for the STGWA50M65DF2 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the STGWA50M65DF2 is suitable for high-reliability applications, such as aerospace and defense, due to its robust design and manufacturing process. However, it's essential to follow proper design and testing procedures to ensure the device meets the required reliability standards.
  • To protect the STGWA50M65DF2 from ESD, handle the device by the body or use an anti-static wrist strap. Ensure the PCB and components are properly grounded, and use ESD-protective packaging and storage materials.

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STGWA50M65DF2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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