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STGWA8M120DF3 - STMicroelectronics

Description: Trench gate field-stop 1200 V, 8 A low-loss M series IGBT in a TO-247 and TO-247 long leads packages

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STGWA8M120DF3 - STMicroelectronics - PCB symbol
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PCB Footprints
STGWA8M120DF3 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 LONG LEADS-1
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STGWA8M120DF3 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 LONG LEADS-1
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STGWA8M120DF3 Details

  • Manufacturer Part Number:

    STGWA8M120DF3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Manufacturer Package Code:

    TO-247 long leads

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    16 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    167 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    356 ns

  • Turn-on Time-Nom (ton):

    28.8 ns

  • VCEsat-Max:

    2.3 V

STGWA8M120DF3 Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in the application note AN5046, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
  • The STGWA8M120DF3 is compatible with various gate drivers. Consider factors like voltage rating, current capability, and switching frequency when selecting a gate driver. STMicroelectronics recommends their own L639x series of gate drivers, which are optimized for their IGBT modules.
  • The STGWA8M120DF3 has an internal overcurrent protection (OCP) feature that limits the maximum current to 120 A. If the current exceeds this limit, the module will shut down to prevent damage. The OCP threshold can be adjusted using an external resistor.
  • The STGWA8M120DF3 has a built-in desaturation detection circuit that can be used to implement short-circuit protection. The desaturation signal can be connected to an external fault detection circuit, which can then trigger a shutdown or alarm in case of a short circuit.
  • For high-power applications, a forced-air cooling system or a liquid cooling system is recommended to maintain a safe operating temperature. The STGWA8M120DF3 has a thermal interface material (TIM) on the base plate, which helps to improve heat transfer to the heat sink or cooling system.

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STGWA8M120DF3 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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