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STGWT28IH125DF - STMicroelectronics

Description: 1250 V, 30 A IH series trench gate field-stop IGBT

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STGWT28IH125DF - STMicroelectronics - PCB symbol
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STGWT28IH125DF - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3P
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STGWT28IH125DF - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-3P
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STGWT28IH125DF Details

  • Manufacturer Part Number:

    STGWT28IH125DF

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-3P, 3 PIN

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.62

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    1250 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    322 ns

  • VCEsat-Max:

    2.5 V

STGWT28IH125DF Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in the application note AN5046, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
  • The STGWT28IH125DF requires a gate driver with a minimum output current of 2A and a voltage rating of at least 15V. STMicroelectronics recommends using their L639x or STDRIVE601 gate driver families, which are specifically designed for IGBTs like the STGWT28IH125DF.
  • The maximum allowed overshoot voltage during turn-on and turn-off is 20% of the maximum rated voltage (1250V). This is specified in the datasheet, but it's essential to ensure that the gate driver and PCB layout are designed to minimize overshoot and ringing to prevent damage to the IGBT.
  • STMicroelectronics recommends using a combination of overcurrent protection (OCP) and overtemperature protection (OTP) circuits to prevent damage to the IGBT. The OCP can be implemented using a sense resistor and a comparator, while the OTP can be achieved using a thermistor or a temperature sensor connected to a microcontroller or a dedicated OTP IC.
  • The STGWT28IH125DF is an electrostatic-sensitive device (ESD) and requires proper storage and handling procedures to prevent damage. STMicroelectronics recommends storing the devices in their original packaging, using ESD-safe materials, and following proper handling and soldering techniques to prevent damage during assembly.

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STGWT28IH125DF Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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