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STGWT30HP65FB - STMicroelectronics

Description: Trench gate field-stop 650 V, 30 A high speed HB series IGBT

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STGWT30HP65FB - STMicroelectronics - PCB symbol
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STGWT30HP65FB - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - STGWT30HP65FB
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STGWT30HP65FB - STMicroelectronics - 3D model - Transistor Outline, Vertical - STGWT30HP65FB
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STGWT30HP65FB Details

  • Manufacturer Part Number:

    STGWT30HP65FB

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-3P, 3 PIN

  • Manufacturer Package Code:

    TO-3P

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    260 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    223 ns

  • Turn-on Time-Nom (ton):

    169 ns

  • VCEsat-Max:

    2 V

STGWT30HP65FB Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in the application note AN5046, which includes guidelines for thermal vias, copper pours, and component placement to ensure optimal thermal performance.
  • The STGWT30HP65FB is compatible with various gate drivers. When selecting a gate driver, consider factors such as voltage rating, current capability, and propagation delay. STMicroelectronics recommends using their L638x or L639x gate driver families for optimal performance.
  • The maximum allowed voltage overshoot during turn-on and turn-off is typically 10-15% above the maximum rated voltage (650V). However, it's essential to consult the application note AN5046 for specific guidelines on voltage overshoot and ringing suppression.
  • To ensure safe operation during short-circuit conditions, implement a fast and reliable short-circuit detection mechanism, such as a desaturation detector or a current sense resistor. Also, ensure that the IGBT is properly protected with a suitable snubber circuit and that the system is designed to withstand the maximum allowed short-circuit current.
  • For high-power applications, a forced-air cooling system or a liquid cooling system is recommended. The cooling system should be designed to maintain a junction temperature below 150°C to ensure reliable operation and long-term reliability.

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STGWT30HP65FB Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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