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STGYA120M65DF2 - STMicroelectronics

Description: Trench gate field-stop, 650 V, 120 A, low-loss M series IGBT in a Max247 long leads package

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STGYA120M65DF2 - STMicroelectronics - PCB symbol
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STGYA120M65DF2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - Max247 long leads_2022
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STGYA120M65DF2 - STMicroelectronics - 3D model - Transistor Outline, Vertical - Max247 long leads_2022
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STGYA120M65DF2 Details

  • Manufacturer Part Number:

    STGYA120M65DF2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Manufacturer Package Code:

    MAX247 LONG LEADS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    160 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    625 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    351 ns

  • Turn-on Time-Nom (ton):

    110 ns

  • VCEsat-Max:

    2.15 V

STGYA120M65DF2 Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in their application note AN5046, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
  • The gate driver selection depends on the specific application requirements, such as voltage, current, and switching frequency. STMicroelectronics recommends using their STGAP1 series of gate drivers, which are specifically designed for their IGBT modules. Consult the gate driver datasheet and application notes for guidance on selection and implementation.
  • The STGYA120M65DF2 has an internal overcurrent protection feature that limits the maximum current to 120 A. However, it's essential to implement an external overcurrent protection circuit to ensure the module's reliability and prevent damage. Consult the datasheet and application notes for guidance on designing an overcurrent protection circuit.
  • Proper cooling is crucial for the IGBT module's reliability and performance. Ensure good thermal contact between the module and the heat sink, and consider using a thermal interface material (TIM) to minimize thermal resistance. The heat sink should be designed to provide adequate airflow and heat dissipation. Consult the datasheet and application notes for thermal management guidelines.
  • STMicroelectronics provides guidelines for soldering and assembly in their application note AN5073. Follow the recommended soldering temperature profile, and ensure the module is handled and stored properly to prevent damage. Consult the datasheet and application notes for specific guidance on assembly and soldering.

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STGYA120M65DF2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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