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STGYA120M65DF2AG - STMicroelectronics

Description: IGBT Transistors PTD IGBT & IPM Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package

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STGYA120M65DF2AG - STMicroelectronics - PCB symbol
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STGYA120M65DF2AG - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - STGWA15S120DF3
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STGYA120M65DF2AG - STMicroelectronics - 3D model - Transistor Outline, Vertical - STGWA15S120DF3
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STGYA120M65DF2AG Details

  • Manufacturer Part Number:

    STGYA120M65DF2AG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Singapore

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2016-12-20

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    160 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    625 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    351 ns

  • Turn-on Time-Nom (ton):

    110 ns

  • VCEsat-Max:

    2.15 V

STGYA120M65DF2AG Frequently Asked Questions (FAQs)

  • STMicroelectronics recommends a 2-layer or 4-layer PCB with a thermal pad connected to a large copper area on the bottom layer to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The SOA is not explicitly stated in the datasheet, but it can be estimated using the device's thermal resistance, maximum junction temperature, and power handling. Consult with STMicroelectronics' application notes or support team for guidance.
  • Yes, but ensure that the devices are properly matched, and the PCB layout is designed to minimize thermal and electrical mismatches between devices. Consult with STMicroelectronics' application notes or support team for guidance.
  • STMicroelectronics recommends using a gate driver with a high current capability and a low output impedance. The recommended gate resistance is 10-20 ohms, and the recommended gate voltage is 15-20V.

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STGYA120M65DF2AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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