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STH10N80K5-2AG - STMicroelectronics

Description: Automotive-grade N-channel 800 V, 0.60 O typ., 8 A MDmesh K5 Power MOSFET in an H²PAK-2 package

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STH10N80K5-2AG - STMicroelectronics - PCB symbol
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STH10N80K5-2AG - STMicroelectronics PCB footprint - Other - Other - H2PAK-2_4.7_2023
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STH10N80K5-2AG - STMicroelectronics - 3D model - Other - H2PAK-2_4.7_2023
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STH10N80K5-2AG Details

  • Manufacturer Part Number:

    STH10N80K5-2AG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    4

  • Avalanche Energy Rating (Eas):

    250 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.68 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.2 pF

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    121 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STH10N80K5-2AG Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STH10N80K5-2AG is not explicitly stated in the datasheet. However, STMicroelectronics provides an application note (AN440) that provides guidance on SOA calculation. It's recommended to consult this document and perform the calculations based on the specific application requirements.
  • Proper cooling is crucial for the STH10N80K5-2AG. Ensure a good thermal interface between the device and the heat sink. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK. The heat sink should have a thermal resistance of less than 1 K/W. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the STH10N80K5-2AG is between 10 V and 15 V. The gate drive current should be sufficient to charge and discharge the gate capacitance quickly, typically in the range of 1 A to 5 A. However, the exact values depend on the specific application requirements and the gate driver used.
  • To protect the STH10N80K5-2AG from overvoltage, use a voltage clamp or a transient voltage suppressor (TVS) diode. For overcurrent protection, use a current sense resistor and a fast-acting fuse or a current limiter. Additionally, consider using a gate driver with built-in overcurrent protection.
  • For optimal performance and reliability, follow good PCB design practices. Keep the power traces short and wide, and use a solid ground plane. Place the device close to the heat sink and ensure good thermal conductivity. Use a Kelvin connection for the gate and source pins to minimize parasitic inductance. Consult the STMicroelectronics application notes and PCB design guidelines for more information.

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STH10N80K5-2AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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