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STH12N120K5-2 - STMicroelectronics

Description: N-channel 1200 V, 620 mΩ typ., 12 A MDmesh K5 Power MOSFETs in H²PAK-2, TO-220, TO-247 and TO-247 long leads packages

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STH12N120K5-2 - STMicroelectronics - PCB symbol
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STH12N120K5-2 - STMicroelectronics PCB footprint - Other - Other - H2PAK_2020
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STH12N120K5-2 - STMicroelectronics - 3D model - Other - H2PAK_2020
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STH12N120K5-2 Details

  • Manufacturer Part Number:

    STH12N120K5-2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, H2PAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    4

  • Avalanche Energy Rating (Eas):

    215 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.69 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STH12N120K5-2 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STH12N120K5-2 is typically defined by the device's voltage and current ratings. For this device, the maximum voltage rating is 1200V and the maximum current rating is 12A. Engineers should ensure that their application operates within these limits to prevent device damage or failure.
  • Proper thermal management is crucial for the STH12N120K5-2. Engineers should ensure good heat sinking, such as using a heat sink with a thermal resistance of less than 1°C/W, and maintaining a maximum junction temperature (Tj) of 150°C. They should also consider the device's power dissipation (PD) and thermal impedance (Zth) when designing their application.
  • The recommended gate drive circuits for the STH12N120K5-2 typically involve using a gate driver IC, such as the STMicroelectronics L638xE, along with a suitable gate resistor (Rg) and gate capacitor (Cg). The gate drive circuit should be designed to provide a fast switching time (tr and tf) and a suitable gate-source voltage (Vgs) to ensure proper device operation.
  • To protect the STH12N120K5-2 from overvoltage and overcurrent, engineers can use a variety of techniques, including adding voltage clamping devices, such as transient voltage suppressors (TVS), and using current sensing and limiting circuits. They should also consider using a fuse or circuit breaker to protect against overcurrent conditions.
  • The STH12N120K5-2 can generate electromagnetic interference (EMI) and radio-frequency interference (RFI) due to its high-frequency switching operation. Engineers should consider using EMI filters, shielding, and grounding techniques to minimize these effects and ensure compliance with relevant electromagnetic compatibility (EMC) standards.

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STH12N120K5-2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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