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STH13N120K5-2AG - STMicroelectronics

Description: Automotive-grade N-channel 1200 V, 0.62 Ω typ., 12 A, MDmesh K5 Power MOSFET in an H²PAK‑2 package

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STH13N120K5-2AG - STMicroelectronics - PCB symbol
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PCB Footprints
STH13N120K5-2AG - STMicroelectronics PCB footprint - Other - Other - H²PAK-2
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STH13N120K5-2AG - STMicroelectronics - 3D model - Other - H²PAK-2
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STH13N120K5-2AG Details

  • Manufacturer Part Number:

    STH13N120K5-2AG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2019-09-13

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    4

  • Avalanche Energy Rating (Eas):

    215 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.69 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.6 pF

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STH13N120K5-2AG Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the STH13N120K5-2AG is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, make sure to attach a heat sink to the device, and apply a thermal interface material (TIM) to fill any gaps between the device and the heat sink. Also, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the STH13N120K5-2AG is between 10V and 15V. This ensures reliable switching and minimizes the risk of damage to the device.
  • Yes, the STH13N120K5-2AG is suitable for high-frequency switching applications up to 100 kHz. However, be sure to follow the recommended gate drive and layout guidelines to minimize switching losses and ensure reliable operation.
  • To protect the device from overvoltage and overcurrent, use a suitable voltage regulator and current limiter in your circuit design. Additionally, consider adding overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device.

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STH13N120K5-2AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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