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STH140N8F7-2 - STMicroelectronics

Description: N-channel 80 V, 3.3 mΩ typ., 90 A STripFET™ F7 Power MOSFET in a H²PAK-2 package

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STH140N8F7-2 Details

  • Manufacturer Part Number:

    STH140N8F7-2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    H2PAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    515 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    90 A

  • Drain-source On Resistance-Max:

    0.004 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    105 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Pulsed Drain Current-Max (IDM):

    360 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STH140N8F7-2 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and to use thermal vias to connect the thermal pad of the STH140N8F7-2 to the ground plane. This helps to dissipate heat efficiently.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Additionally, ensure good thermal design, use a heat sink if necessary, and consider derating the device's power handling at high temperatures.
  • The STH140N8F7-2 has built-in ESD protection, but it's still important to follow proper ESD handling procedures during manufacturing and assembly. Use ESD-safe materials, handle the devices by the body, and avoid touching the pins or die.
  • To optimize the gate drive circuit, ensure a low-impedance gate drive, use a gate resistor (Rg) between 10-20 ohms, and consider using a gate driver IC with a high current capability. Also, ensure the gate voltage (Vgs) is within the recommended range of 0-10V.
  • When paralleling multiple STH140N8F7-2 devices, ensure that each device has its own gate drive circuit, and that the gate signals are properly synchronized. Also, consider the current sharing and thermal management between devices, and ensure that the total current rating is not exceeded.

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STH140N8F7-2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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