STH175N4F6-2AG footprint, schematic symbol and 3D model by STMicroelectronics

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STH175N4F6-2AG - STMicroelectronics PCB footprint - Other - Other - H2PAK-2

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Datasheet Download Datasheet
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Part Number STH175N4F6-2AG
Manufacturer STMicroelectronics
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - H2PAK-2
Released Date Sep 20, 2019
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

STH175N4F6-2AG Details

Manufacturer Part Number:
STH175N4F6-2AG
Brand Name:
STMicroelectronics
Rohs Code:
Yes
Part Life Cycle Code:
Obsolete
ECCN Code:
EAR99
Manufacturer:
STMicroelectronics
YTEOL:
0
Configuration:
SINGLE
Drain Current-Max (ID):
120 A
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Number of Elements:
1
Operating Temperature-Max:
175 °C
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
150 W
Surface Mount:
YES
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED

STH175N4F6-2AG Frequently Asked Questions (FAQs)

The maximum junction temperature range for the STH175N4F6-2AG is -40°C to 175°C, as specified in the datasheet.
To calculate the maximum allowable power dissipation, you need to consider the junction temperature, thermal resistance, and the ambient temperature. The formula is: Pd(max) = (Tj(max) - Ta) / Rth(j-a), where Pd(max) is the maximum allowable power dissipation, Tj(max) is the maximum junction temperature, Ta is the ambient temperature, and Rth(j-a) is the thermal resistance from junction to ambient.
The recommended gate-source voltage for the STH175N4F6-2AG is typically between 5V and 10V, depending on the specific application and requirements. However, it's essential to ensure that the gate-source voltage does not exceed the maximum specified voltage (±20V) to prevent damage to the MOSFET.
To select the correct MOSFET driver for the STH175N4F6-2AG, consider factors such as the driver's output current capability, voltage rating, and rise/fall times. The driver should be able to provide sufficient current to charge and discharge the MOSFET's gate capacitance quickly, and its voltage rating should match or exceed the MOSFET's maximum gate-source voltage.
The STH175N4F6-2AG has an electrostatic discharge (ESD) rating of 2 kV (Human Body Model) and 400 V (Machine Model) according to the datasheet.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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