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STI10NM60N - STMicroelectronics

Description: MOSFET N-CH 600V 0.53Ohm 10A Mdmesh II

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STI10NM60N - STMicroelectronics - PCB symbol
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STI10NM60N - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I²PAK (TO-262)-ren1
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STI10NM60N - STMicroelectronics - 3D model - Transistor Outline, Vertical - I²PAK (TO-262)-ren1
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STI10NM60N Details

  • Manufacturer Part Number:

    STI10NM60N

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    I2PAK-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    200 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.55 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.2 pF

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    70 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STI10NM60N Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STI10NM60N is not explicitly stated in the datasheet, but it can be calculated using the device's thermal resistance, maximum junction temperature, and voltage ratings. A safe operating area analysis should be performed to ensure the device operates within its thermal and electrical limits.
  • To minimize parasitic inductance and capacitance, follow best practices for PCB layout, such as keeping high-frequency traces short and away from the device's pins, using a solid ground plane, and placing decoupling capacitors close to the device. Consult the application note AN5046 from STMicroelectronics for more detailed guidelines.
  • The recommended gate drive circuit for the STI10NM60N depends on the specific application and switching frequency. A general-purpose gate drive circuit can be found in the application note AN5046 from STMicroelectronics. However, it's recommended to consult with an experienced engineer or the manufacturer's support team for a customized gate drive design.
  • To ensure proper cooling, follow the thermal management guidelines in the datasheet and application notes. Calculate the device's power dissipation and thermal resistance, and design a heat sink or cooling system that can maintain the device's junction temperature below the maximum rating. Consult with a thermal expert or the manufacturer's support team for customized thermal design guidance.
  • To protect the STI10NM60N from electrostatic discharge (ESD), follow the ESD handling and protection guidelines in the datasheet and application notes. Implement ESD protection devices, such as TVS diodes or ESD arrays, on the PCB, and ensure that the device is handled and stored in an ESD-safe environment.

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STI10NM60N Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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