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STI13NM60N - STMicroelectronics

Description: N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFET in an I²PAK package

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STI13NM60N - STMicroelectronics - PCB symbol
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PCB Footprints
STI13NM60N - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I²PAK_2024
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STI13NM60N - STMicroelectronics - 3D model - Transistor Outline, Vertical - I²PAK_2024
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STI13NM60N Details

  • Manufacturer Part Number:

    STI13NM60N

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    200 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.36 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Pulsed Drain Current-Max (IDM):

    44 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STI13NM60N Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the STI13NM60N is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure proper thermal management, the STI13NM60N should be mounted on a heat sink with a thermal resistance of less than 1°C/W, and the ambient temperature should be kept below 50°C.
  • The recommended gate resistor value for the STI13NM60N is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the STI13NM60N can be used in a half-bridge configuration, but it requires a separate gate driver for each switch, and the dead time between the high-side and low-side switches must be carefully controlled.
  • To protect the STI13NM60N from overvoltage and overcurrent, a voltage clamp or a transient voltage suppressor (TVS) can be used, and a current sense resistor or a current monitor IC can be used to detect overcurrent conditions.

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STI13NM60N Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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