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STI14NM65N - STMicroelectronics

Description: N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D²PAK, I²PAK, TO-247

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STI14NM65N - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I2PAK (TO-262)
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STI14NM65N - STMicroelectronics  - 3D model - Transistor Outline, Vertical - I2PAK (TO-262)
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STI14NM65N Details

  • Manufacturer Part Number:

    STI14NM65N

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-262AA

  • Package Description:

    I2PAK-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    300 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.38 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STI14NM65N Frequently Asked Questions (FAQs)

  • STMicroelectronics recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Additionally, consider using a heat sink, and ensure good thermal coupling between the device and the heat sink.
  • When selecting a gate driver for the STI14NM65N, critical parameters to consider include the gate driver's output current capability, rise and fall times, and the ability to handle the device's input capacitance. The gate driver should also be able to provide a sufficient voltage rating to ensure proper device operation.
  • To protect the STI14NM65N from overvoltage and overcurrent conditions, consider using a voltage regulator or a transient voltage suppressor (TVS) to limit the voltage applied to the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
  • To protect the STI14NM65N from electrostatic discharge (ESD), follow proper handling and storage procedures, and consider using ESD protection devices such as TVS diodes or ESD arrays on the PCB. Ensure that the PCB design includes ESD protection for all pins, especially the gate and drain pins.

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STI14NM65N Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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