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STI21N65M5 - STMicroelectronics

Description: N‑channel 650 V, 150 mΩ typ., 17 A MDmesh M5 Power MOSFETs in a D²PAK, TO-220FP, I²PAK and TO-220 packages

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STI21N65M5 - STMicroelectronics - PCB symbol
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PCB Footprints
STI21N65M5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I2PAK_2022
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3D Models
STI21N65M5 - STMicroelectronics - 3D model - Transistor Outline, Vertical - I2PAK_2022
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STI21N65M5 Details

  • Manufacturer Part Number:

    STI21N65M5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-262AA

  • Package Description:

    TO-262, I2PAK-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    400 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    68 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STI21N65M5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STI21N65M5 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be defined as the region where the device can operate without exceeding its maximum ratings. For the STI21N65M5, this would typically be limited by the maximum junction temperature (Tj) of 175°C, the maximum drain-source voltage (Vds) of 650V, and the maximum drain current (Id) of 21A.
  • To ensure proper cooling of the STI21N65M5, it is essential to provide a suitable heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which can be calculated based on the device's thermal resistance (Rth) and the maximum operating temperature. Additionally, the PCB layout should be designed to minimize thermal resistance and ensure good airflow around the device.
  • The recommended gate drive voltage for the STI21N65M5 is typically between 10V and 15V, depending on the specific application and switching frequency. A higher gate drive voltage can help to reduce switching losses and improve the device's overall performance, but it may also increase the risk of gate oxide breakdown. It is essential to consult the datasheet and application notes for specific guidance on gate drive voltage selection.
  • To protect the STI21N65M5 from overvoltage and overcurrent conditions, it is essential to implement suitable protection circuits in the design. This may include voltage clamping devices, such as zener diodes or transient voltage suppressors (TVS), to limit the voltage across the device. Additionally, overcurrent protection can be achieved using current sense resistors and comparators to detect excessive current levels and trigger a shutdown or fault condition.
  • The recommended layout and routing for the STI21N65M5 on a PCB involves minimizing the length and inductance of the power traces, using a solid ground plane, and keeping the gate and source connections as short as possible. It is also essential to ensure that the device is properly decoupled from the power supply and that the PCB layout is designed to minimize electromagnetic interference (EMI) and radio-frequency interference (RFI).

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STI21N65M5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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