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STI260N6F6 - STMicroelectronics

Description: N-channel 60 V, 0.0024 Ω, 120 A STripFET™ VI DeepGATE™ Power MOSFET in TO-220 and I²PAK packages

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STI260N6F6 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I2PAK (TO-262)
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STI260N6F6 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - I2PAK (TO-262)
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STI260N6F6 Details

  • Manufacturer Part Number:

    STI260N6F6

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-262AA

  • Package Description:

    ROHS COMPLIANT, TO-262, I2PAK-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.003 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STI260N6F6 Frequently Asked Questions (FAQs)

  • STMicroelectronics recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow around the device.
  • Monitor the drain-source voltage (Vds), gate-source voltage (Vgs), and drain current (Id) to ensure the device operates within the recommended specifications. Also, keep an eye on the junction temperature (Tj) and ambient temperature (Ta) to prevent overheating.
  • Use a voltage regulator or a voltage clamp to limit the voltage applied to the device. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Additionally, consider using a fuse or a PTC (Positive Temperature Coefficient) thermistor to protect against overcurrent conditions.
  • A gate drive circuit with a low impedance output stage and a high current capability is recommended. A dedicated gate driver IC or a totem pole configuration using discrete components can be used. Ensure the gate drive circuit can provide a sufficient voltage swing (e.g., 10-15V) to fully enhance the device.

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STI260N6F6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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