STI33N60M6 - STMicroelectronics

STI33N60M6 Details

• Manufacturer Part Number:

  STI33N60M6

• Brand Name:

  STMicroelectronics

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Not Recommended

• Country Of Origin:

  Mainland China

• ECCN Code:

  EAR99

• Manufacturer:

  STMicroelectronics

• YTEOL:

  3

• Avalanche Energy Rating (Eas):

  500 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  600 V

• Drain Current-Max (ID):

  25 A

• Drain-source On Resistance-Max:

  0.125 Ω

• FET Technology:

  SUPERJUNCTION MOSFET

• Feedback Cap-Max (Crss):

  4.2 pF

• JESD-30 Code:

  R-PSIP-T3

• Number of Elements:

  1

• Number of Terminals:

  3

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  IN-LINE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  190 W

• Pulsed Drain Current-Max (IDM):

  78 A

• Surface Mount:

  NO

• Terminal Form:

  THROUGH-HOLE

• Terminal Position:

  SINGLE

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON