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STI57N65M5 - STMicroelectronics

Description: STI57N65M5 N-Channel MOSFET, 42 A, 710 V MDmesh M5, 3-Pin I2PAK STMicroelectronics

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STI57N65M5 - STMicroelectronics - PCB symbol
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PCB Footprints
STI57N65M5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I²PAK (TO-262)-1
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3D Models
STI57N65M5 - STMicroelectronics - 3D model - Transistor Outline, Vertical - I²PAK (TO-262)-1
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STI57N65M5 Details

  • Manufacturer Part Number:

    STI57N65M5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, TO-262, I2PAK-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    960 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    42 A

  • Drain-source On Resistance-Max:

    0.063 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    168 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STI57N65M5 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STI57N65M5 is -40°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
  • To ensure proper biasing, make sure to provide a stable voltage supply within the recommended range (VCC = 10V to 15V) and maintain a minimum gate-source voltage (VGS) of 10V to ensure the device is fully enhanced.
  • For optimal thermal management, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity between the device and the heat sink. Keep the device away from high-current paths and use a thermal pad or thermal interface material to improve heat dissipation.
  • To protect the device from ESD, handle the device by the body or pins, avoid touching the pins, and use an ESD wrist strap or mat when handling the device. Also, ensure the PCB has ESD protection components, such as TVS diodes or ESD protection arrays.
  • A gate drive circuit with a low impedance output stage and a high current capability (at least 1A) is recommended. A gate resistor (Rg) between 10Ω to 100Ω can be used to slow down the gate voltage rise time and reduce electromagnetic interference (EMI).

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STI57N65M5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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