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STI6N80K5 - STMicroelectronics

Description: N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in an I2PAK package

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STI6N80K5 - STMicroelectronics - PCB symbol
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PCB Footprints
STI6N80K5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I2PAK_2022
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3D Models
STI6N80K5 - STMicroelectronics - 3D model - Transistor Outline, Vertical - I2PAK_2022
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STI6N80K5 Details

  • Manufacturer Part Number:

    STI6N80K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, I2PAK-3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    85 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    1.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.5 W

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STI6N80K5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STI6N80K5 is not explicitly stated in the datasheet. However, according to STMicroelectronics' application notes, the device can operate safely up to 100 kHz with a maximum drain-source voltage of 500 V and a maximum drain current of 6 A.
  • To ensure proper thermal management, it's essential to provide a good thermal interface between the device and the heat sink. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK, and ensure the heat sink is designed to handle the maximum power dissipation of the device. Additionally, follow the recommended PCB layout and thermal design guidelines provided in the datasheet and application notes.
  • The recommended gate drive voltage for the STI6N80K5 is between 10 V and 15 V. However, the device can tolerate up to 20 V gate-source voltage. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device and ensure reliable operation.
  • To protect the STI6N80K5 from overvoltage and overcurrent conditions, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit. The OVP circuit should be designed to clamp the voltage to a safe level, typically around 600 V, and the OCP circuit should be designed to limit the current to a safe value, typically around 8 A. Additionally, consider using a thermal protection circuit to prevent overheating.
  • The recommended PCB layout for the STI6N80K5 involves keeping the power loops as small as possible, using a solid ground plane, and minimizing the distance between the device and the decoupling capacitors. Additionally, ensure the PCB is designed to handle the high-frequency switching of the device, and follow the recommended layout guidelines provided in the datasheet and application notes.

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STI6N80K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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